Properties of the electron-hole condensate in Ge double-injection diodes. I

The results of a study of the properties of electrically injected electrons and holes in Ge at liquid-He temperatures are presented. The injected electrons and holes are found to form a condensate with properties like those extensively explored in optical-excitation experiments. Spatial scans of the recombination radiation from the condensate show that it is possible to obtain an approximately uniform distribution of condensate between the p+ and n+ contacts. The transient response shows that the radiation from the condensate decays exponentially at 3.2°K, with a decay time of approximately 40 sec. A number of features of the condensate radiation are found to be in agreement with the properties observed in material doped with Li. © 1976 The American Physical Society.