P.M. Grant
Physical Review B
Rectifying barriers of undoped and lightly doped trans-(CH)x films with low work function metals have been investigated. I-V and C-V measurements were used to explore the junction properties. The junction characteristics were found to be Schottky-like in the large sense accompanied by significant differences in detail. Using C-V measurements to determine the carrier concentration, we found the carrier mobility to be concentration dependent.
P.M. Grant
Physical Review B
G. Bryan Street, W.D. Gill, et al.
Journal of the Chemical Society, Chemical Communications
K. Keiji Kanazawa, A. Diaz, et al.
Synthetic Metals
M.R. Philpott, P.M. Grant, et al.
The Journal of Chemical Physics