H. Rosen, R.M. MacFarlane, et al.
Physical Review B
The facet temperature of AlGaAs single-quantum-well laser diodes were examined via Raman microprobe spectroscopy. The facets were fabricated either by cleaving in air or by chemically assisted ion-beam etching. The ridge width was 5 μm. Large sample-dependent variations in the heating induced by the argon probe beam are observed. These variations correlate with the appearance of disorder-induced modes in the Raman spectrum and the bias current-induced heating of the laser facet.
H. Rosen, R.M. MacFarlane, et al.
Physical Review B
M. Kossel, P. Buchmann, et al.
Electronics Letters
P. Vettiger, M. Benedict, et al.
ISLC 1990
S. Guha, H. Munekata, et al.
Journal of Crystal Growth