The facet temperature of AlGaAs single-quantum-well laser diodes were examined via Raman microprobe spectroscopy. The facets were fabricated either by cleaving in air or by chemically assisted ion-beam etching. The ridge width was 5 μm. Large sample-dependent variations in the heating induced by the argon probe beam are observed. These variations correlate with the appearance of disorder-induced modes in the Raman spectrum and the bias current-induced heating of the laser facet.