J.H. Stathis, R. Bolam, et al.
INFOS 2005
We report low-temperature magnetotransport measurements under hydrostatic pressure (up to 1.2 GPa) on a GaSb-InAs-GaSb double heterostructure. At ambient pressure the sample shows mixed conduction by electrons and holes. Pressure induces a decrease in the carrier concentrations which leads to a semimetal-semiconductor transition. In the semiconductor regime, xx(B) and xy(B) curves show the normal behavior expected for one-carrier two-dimensional conduction, while in the semimetallic case this behavior is altered by the partial compensation of the system. © 1987 The American Physical Society.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
John G. Long, Peter C. Searson, et al.
JES
P. Alnot, D.J. Auerbach, et al.
Surface Science
T.N. Morgan
Semiconductor Science and Technology