Preparation of SrRuO₃ films for advanced CMOS metal gates

We report on the growth and properties of SrRuO3 films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO2, atomic-layer deposited Al2O3 and HfO 2 dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO 3 metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N2 +10% H2) were employed for testing the stability of the SrRuO3 metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO3 gate electrode are analysed with regards to integration in CMOS devices. © 2004 Elsevier Ltd. All rights reserved.