Post implant strip optimization for 90nm and beyond technologies

Abstract

Optical Emission Spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This methodology was used to evaluate candidate strip chemistries for reducing post implant strip defectivity and increasing device functional yield. © 2006 IEEE.