Abstract
In this paper, techniques for the oxidation of silicon in microwave, r.f. and d.c. oxygen plasmas are reviewed. Oxidation of silicon in an r.f. oxygen plasma appears promising as a low temperature oxidation process, since it has been demonstrated for silicon wafers of large diameter. Rapid and uniform oxide growth has been achieved at temperatures as low as 300 °C. The physical and electrical properties of plasma oxides are comparable with those of thermal oxides grown at 1000 °C. Devices fabricated using a plasma oxidation process have characteristics similar to those fabricated using conventional high temperature oxidation. © 1981.