E. Todd Ryan, Steve Gates, et al.
ADMETA 2011
Plasma enhanced chemical vapor deposition technique was used to prepare carbon doped oxide dielectrics comprised of Si, C, O and H (SiCOH). Low-k films with a dielectric constant (k) of about 2.8 were deposited from tetramethylcyclotetrasiloxane (TMCTS). The entire range of SiCOH films demonstrated relatively low coefficients of thermal expansion of about 12×10-6 K and mechanical properties that make them suitable for integration as the interconnect dielectric in ultralarge scale integration (ULSI) devices.
E. Todd Ryan, Steve Gates, et al.
ADMETA 2011
Guy M. Cohen, Leathen Shi, et al.
ASMC 2014
Katherine Saenger, James C. Tsang, et al.
Applied Physics Letters
John N. Myers, Xiaoxian Zhang, et al.
Applied Physics Letters