Deborah A. Neumayer, Katherine L. Saenger, et al.
MRS Proceedings 1999
Plasma enhanced chemical vapor deposition technique was used to prepare carbon doped oxide dielectrics comprised of Si, C, O and H (SiCOH). Low-k films with a dielectric constant (k) of about 2.8 were deposited from tetramethylcyclotetrasiloxane (TMCTS). The entire range of SiCOH films demonstrated relatively low coefficients of thermal expansion of about 12×10-6 K and mechanical properties that make them suitable for integration as the interconnect dielectric in ultralarge scale integration (ULSI) devices.
Deborah A. Neumayer, Katherine L. Saenger, et al.
MRS Proceedings 1999
Ph. Avouris, Yu-Ming Lin, et al.
IEDM 2010
E. Todd Ryan, Jeremy Martin, et al.
JES
Alfred Grill
JVSTB