Kigook Song, Robert D. Miller, et al.
Macromolecules
The refractive index (at 632.8 nm, He-Ne laser light) of fluorocarbon films on silicon, deposited either inadvertently in the course of SiO2 contact hole reactive ion etching with CF4Xvol.%H2 (X≤40) or deliberately in a CF450vol.%H2 glow discharge, was determined by ellipsometry. The best fit of the data gives a complex refractive index of 1.48-i0.003. The calculated refractive index was used to measure film thicknesses of fluorocarbon films deposited under a great variety of experimental conditions. Complementary results were provided by helium ion backscattering measurements. The results obtained by the two methods compared favorably. Ellipsometry therefore represents a probe which can be used to determine rapidly the fluorocarbon contamination state of a silicon wafer after reactive ion etching in CF4-H2. The extension of the present method to characterize films deposited by reactive ion etching processes utilizing other etching gas combinations is discussed. © 1986.
Kigook Song, Robert D. Miller, et al.
Macromolecules
T.N. Morgan
Semiconductor Science and Technology
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.