R. Ghez, M.B. Small
JES
Quantitative experimental results are reported for the optical, electrical, and crystallographic properties of the layered dichalcogenide TiS2. A new method, utilizing a combination of titanium sputtering and reaction with H2S at low temperatures, was used to synthesize this group-IV transition-metal dichalcogenide. Both the electrical data and results of optical studies support the semimetal picture as opposed to the semiconducting model. © 1976 The American Physical Society.
R. Ghez, M.B. Small
JES
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R. Ghez, J.S. Lew
Journal of Crystal Growth