About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B - CMMP
Paper
Physical principles of the single transistor effect
Abstract
Starting with the physics of tunneling transport through a molecule, we describe the principles underlying electrical amplification effects of a (Formula presented) molecule. We discuss in detail the consequences of intramolecular electronic-level repulsion, an effect induced by compression of the molecule, which leads to an exponential variation of the current for a minute compression of the molecule. This detailed understanding underpins the (Formula presented) amplifier. Using a planar configuration and an independent electromechanical grid, a transistor effect results from this repulsion effect. © 1998 The American Physical Society.