Publication
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure
Abstract
Near-edge photoluminescence (PL) from quantum wells (QWs) has been observed. QW emission variations are measured under applied hydrostatic pressure. It is found that strong emission comes from X1-band edge.