A. Gangulee, F.M. D'Heurle
Thin Solid Films
We report measurements of the photoionization cross section for the DX center in Si-doped AlxGa1-xAs. The temperature dependence of the photoionization cross section for the Si DX center is reported for the first time. Data have been measured in both direct- and indirect-gap material and over a much wider temperature range than was possible for the Te DX center, thus providing a more stringent test of any model than the earlier data. The results agree well with the large-lattice-relaxation model proposed by Lang et al. © 1987 The American Physical Society.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
J.C. Marinace
JES
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials