Publication
Physical Review Letters
Paper

Photoemission studies of the electronic structure of EuO, EuS, EuSe, and GdS

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Abstract

Photoemission measurements on the magnetic semiconductors EuO, EuS, and EuSe show emission from 4f7 states which lie in the gap above the top of ∼2- to 3-eV-wide valence bands. These measurements, together with optical data, indicate semiconductor energy gaps of 4.3, 3.1, and 3.1 eV for EuO, EuS, and EuSe (all ±0.4 eV). Metallic GdS shows a narrow occupied conduction band at the Fermi level, in addition to a filled valence band and 4f7 state. © 1969 The American Physical Society.

Date

04 Aug 1969

Publication

Physical Review Letters

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