O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
An analytical model for trapping-state photodepopulation measurements in conductor-thin-film-insulator-conductor structures is presented. The external-circuit-current dependence on applied voltage is determined, and it is shown that moments of the spatial distribution of trapped charge in the insulator can be extracted from collected-charge versus applied-field characteristic curves. The photodepopulation technique is compared with more widely used differential-capacitance and phtoemission-current techniques. © 1974 The American Physical Society.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
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IEEE J-STARS
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Surface Science
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Digital Discovery