Photo-hall effect in CdSe sintered photoconductors

Abstract

Measurements of the photo-Hall effect in sintered layers of CdSe were made. The mobility was found to vary as the 0.15 to the 0.49 power of the density of carriers per unit area depending on the sample and the temperature. Measurements of the mobility as a function of wave length indicate that the carriers do not appreciably diffuse away from the surface and there is evidence that some of the decrease of the photoresponse on the short wave length side of the absorption edge is due to a change in mobility, possibly resulting from surface scattering. © 1961.