Paul F. Schofield, Andrew D. Smith, et al.
Geostandards and Geoanalytical Research
Resistivity versus temperature measurements and time-resolved x-ray diffraction were used to study Ge-Te phase change materials. Resistivity versus temperature measurements showed one sharp drop in resistivity for films with 30, 50, and 70 at. % Ge, two steps for films with 40 at. % Ge, and a gradual transition for films with 60 at. % Ge. Films with 30, 50, and 70 at. % Ge crystallized in a single-step process with GeTe and Te, only GeTe, and GeTe and Ge diffraction peaks, respectively. Films with 40 and 60 at. % Ge crystallized in a two-step process with GeTe peaks appearing first and additional Te or Ge peaks, respectively, appearing at higher temperature. © 2009 American Institute of Physics.
Paul F. Schofield, Andrew D. Smith, et al.
Geostandards and Geoanalytical Research
Geoffrey W. Burr, Matthew J. Breitwisch, et al.
Journal of Vacuum Science and Technology B
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VLSI-TSA 2012
Simone Raoux, Huai-Yu Cheng, et al.
NVMTS 2011