Archana Devasia, David MacMahon, et al.
Thin Solid Films
The stoichiometric Ga4 Sb6 Te3 and Ga-Sb materials were systemically studied. The alloy Ga4 Sb6 Te3 shows a fast crystallization speed, very high crystallization temperature, Tx, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher Tx than Ge2 Sb 2 Te5 indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, Tx and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga4 Sb6 Te3 with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory. © 2011 American Institute of Physics.
Archana Devasia, David MacMahon, et al.
Thin Solid Films
Kandabara Tapily, Steven Consiglio, et al.
ECSSMEQ 2014
Simone Raoux, Cyril Cabral, et al.
Journal of Applied Physics
Simone Raoux, Becky Mun̈oz, et al.
Applied Physics Letters