Hot electron emission lithography
M. Poppeller, E. Cartier, et al.
Microlithography 1999
Changes in nucleation and phase formation sequence with temperature may strongly affect the morphology of the final phase. The Si(111)-(3 × 3) Ag structure develops directly from the clean (7×7) structure at lower temperatures (500-700 K). Preferred nucleation at step edges and (7×7) domain boundaries reduces the effective dimensionality of the substrate and explains anomalies in domain size scaling observed by Zuo and Wendelken. An intermediate three-domain (3×1) structure precedes the 3 structure at higher temperatures, leading to a complete change in 3 nucleation and growth, as well as final domain size distribution and total Ag coverage. © 1992 The American Physical Society.
M. Poppeller, E. Cartier, et al.
Microlithography 1999
A.W. Denier van der Gon, R.M. Tromp, et al.
Thin Solid Films
S. Kodambaka, F.M. Ross, et al.
MRS Fall Meeting 2006
R.M. Tromp, M. Copel, et al.
Review of Scientific Instruments