P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review
Abstract
The phenomenon of persistent photoconductivity in AlGaAs/GaAs modulation-doped layers and transistors is reviewed. Experimental observations, mechanisms which are responsible for it and structures for its elimination are discussed. © 1986.
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