Full metal gate with borderless contact for 14 nm and beyond
Soon-Cheon Seo, L.F. Edge, et al.
VLSI Technology 2011
Two-dimensional crystals offer promise as diffusion barriers that can also facilitate electronic conduction through the barrier plane via tunneling. We present barriers in which crystal imperfections are patched, leaving the pristine regions of the crystal exposed and able to both prevent diffusion and allow electronic conduction. This is accomplished by atomic layer deposition, where nucleation of patch material is inhibited on the pristine crystal and promoted elsewhere. Demonstrations of the effectiveness of this technique are performed in the contexts of sulfur diffusion control in photovoltaic kesterite devices and oxygen diffusion control in oxide-based resistive switching devices.
Soon-Cheon Seo, L.F. Edge, et al.
VLSI Technology 2011
Daniel Rodrigo, Tony Low, et al.
Physical Review B
Steven Consiglio, H. Higuchi, et al.
IMCS 2021
Damon B. Farmer
Journal of Applied Physics