Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in topgate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices. © 2009 American Chemical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
T. Schneider, E. Stoll
Physical Review B
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021