G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in topgate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices. © 2009 American Chemical Society.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Julien Autebert, Aditya Kashyap, et al.
Langmuir