Single wafer sSOI by SIMOX
J.P. De Souza, S.W. Bedell, et al.
ISTDM 2006
Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a 2D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the 2D distribution in the two cases was remarkably different. In the Si-implanted sample the 2D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of 2D interaction with dopants/dislocations in GaAs are postulated.
J.P. De Souza, S.W. Bedell, et al.
ISTDM 2006
S.W. Bedell, A. Reznicek, et al.
Materials Science in Semiconductor Processing
E. Leobandung, E. Barth, et al.
IEDM 1999
T.F. Kuech, E.D. Marshall, et al.
Journal of Crystal Growth