113-GHz f T graded-base SiGe HBTs
E.F. Crabbé, B. Mcyerson, et al.
Device Research Conference 1993
We have conducted studies of p-type doping using gallium and boron of germanium grown on germanium (100) substrates by molecular-beam epitaxy. Excellent germanium films have been grown on Ge substrates with little demarcation of the substrate-epi interface. Gallium doping of germanium takes place through an adlayer at the growth front, and between growth temperatures of 450 °C and 550 °C successful p doping of germanium by gallium with good activation has been accomplished. A first-order kinetic incorporation model has been used to describe the behavior of gallium in germanium as a function of surface coverage and growth temperature. Boron is an excellent p dopant in germanium with good activation at high concentrations and sharp transition profiles.
E.F. Crabbé, B. Mcyerson, et al.
Device Research Conference 1993
A.R. Powell, K. Eberl, et al.
Journal of Crystal Growth
M. Bendayan, R. Beserman, et al.
Applied Surface Science
P. Fahey, Subramanian S. Iyer, et al.
Applied Physics Letters