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Publication
IEEE JQE
Paper
Oxygen-Implanted Double-Heterojunction GaAs/GaAlAs Injection Lasers
Abstract
We describe a new process for stripe formation in double-heterostructure GaAs/GaAlAs injection lasers. This process, which uses oxygen-ion implantation to form the stripe through a chemical doping effect, has several advantages over alternative methods, both with respect to device processing and device properties and has produced high yields of CW room-temperature lasers. We present the details of the device structure and fabrication processes. The results of annealing studies, optical measurements, and lifetesting are described. Copyright 1975 by The Institute of Electrical and Electronics Engineers, Inc.