About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Oxidation of silicide thin films: TiSi2
Abstract
The oxidation of TiSi2 thin films on polysilicon illustrates extreme examples of behavior. At 700°C in wet O2, one observes the formation of titanium oxide and the simultaneous rejection of silicon towards greater depths, away from the oxidized surface layer. At 1100°C with the same type of sample, one observes the growth of a metal-free layer of SiO2, the formation of which required not only the use of the whole available polysilicon, but the reduction of the initial disilicide to a lower silicide, mostly TiSi. These observations are discussed in terms of previous results obtained either with TiSi2 or with other silicides, and in terms of what is known about the thermodynamics of the system titanium oxide-silicon oxide.