Publication
Physical Review Letters
Paper

Oxidation of Clean Ge and Si Surfaces

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Abstract

The low-energy-electron loss spectra of oxygen adsorbed at room temperature on clean Si and Ge (100) and (111) surfaces suggest that each oxygen atom is doubly bonded to a surface atom. Using a chemical-bonding argument, it is shown that this complex is also energetically more favorable than previously proposed oxidation models. © 1975 The American Physical Society.

Date

05 May 1975

Publication

Physical Review Letters

Authors

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