About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Oxidation of Clean Ge and Si Surfaces
Abstract
The low-energy-electron loss spectra of oxygen adsorbed at room temperature on clean Si and Ge (100) and (111) surfaces suggest that each oxygen atom is doubly bonded to a surface atom. Using a chemical-bonding argument, it is shown that this complex is also energetically more favorable than previously proposed oxidation models. © 1975 The American Physical Society.