Optically detected electron cyclotron resonance in silicon

Abstract

The cyclotron resonance of electrons in Si has been optically detected. At resonance, there is a decrease in the luminescence from defects produced near the surface of Si which has been exposed to a dry etching plasma. The resonances are observable optically even when the lines are too broad to be detected directly via microwave absorption measurements. This result, together with the absence of hole resonances, provides clues as to the possible recombination mechanisms at the defects.