Julien Autebert, Aditya Kashyap, et al.
Langmuir
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
T.N. Morgan
Semiconductor Science and Technology
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry