Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
T.N. Morgan
Semiconductor Science and Technology
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids