Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
P. Alnot, D.J. Auerbach, et al.
Surface Science