Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
K.N. Tu
Materials Science and Engineering: A