William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The formation of subbands in In1-xGaxAsGaSb1-yAsy superlattices has resulted in entirely different absorption characteristics from those of the host semiconductors. The measured absorption edges agree with the calculated energy gaps of the superlattices of various configurations, establishing that the conduction bandedge of InAs lies approximately 0.15eV below the valence bandedge of GaSb. © 1978.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
David B. Mitzi
Journal of Materials Chemistry
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993