William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The optical absorption of heavily doped and closely compensated Ge is calculated using a Halperin-Lax band-tail model and an ad hoc matrix element. The only adjustable parameter is an effective temperature Tion for the contribution of the position correlations of the ions to the screening; Tion is estimated to be about 7000°K. The results are in reasonable agreement with experiment; direct transitions at k=0 make the dominant contribution to the edge. © 1971 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
J.A. Barker, D. Henderson, et al.
Molecular Physics
Frank Stem
C R C Critical Reviews in Solid State Sciences
David B. Mitzi
Journal of Materials Chemistry