Ellen J. Yoffa, David Adler
Physical Review B
A new test structure has been developed, which is comprised of MOSFET arrays and an on-chip operational amplifier feedback loop for measuring threshold voltage variation. The test structure also includes an on-chip clock generator and address decoders to scan through the arrays. It can be used in an inline test environment to provide rapid assessment of Vt variation for technology development and chip manufacturing. Hardware results in a 65-nm technology are presented. The significance of the bias dependence of Vt variation is discussed for SRAM product designs. © 2009 IEEE.
Ellen J. Yoffa, David Adler
Physical Review B
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Robert W. Keyes
Physical Review B
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry