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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Dips in the photoconductive spectral response of many-valleyed semiconductors at multiples of the intervalley phonon emission threshold energies are predicted; in analogy to the photoconductivity oscillations due to LO phonon interaction observed in many semiconductors. The conditions for a successful experiment are discussed in detail for the case of donor-conduction band transitions in Si. © 1968.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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