Eloisa Bentivegna
Big Data 2022
An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures. © 1983 Springer-Verlag.
Eloisa Bentivegna
Big Data 2022
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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ACS Nano
Imran Nasim, Melanie Weber
SCML 2024