Zihong Liu, Masaharu Kobayashi, et al.
IEDM 2009
Ge is one of the promising candidates for high-mobility channel material in future complementary metaloxidesemiconductor technology. High-field transport in short-channel Ge p-channel field-effect transistors (PFETs) needs to be examined since device performance is determined by high-field velocity in quasi-ballistic transport regime. In this paper, ballisticity and the relationship between carrier velocity and mobility in short-channel (70-nm) Ge PFETs were thoroughly investigated. A 1.6 × -2 × higher velocity was confirmed in Ge PFETs than that in Si PFETs. Uniaxial stress is also a strong performance booster besides high-mobility substrate. The effectiveness of the uniaxial stress to velocity enhancement in Ge PFETs was experimentally demonstrated in short channel regime. A 1.4 × higher drive current can be achievable by uniaxially strained Ge PFET in ballistic transport regime as compared with strained Si PFET. © 2006 IEEE.
Zihong Liu, Masaharu Kobayashi, et al.
IEDM 2009
Nicolas Daix, Emanuele Uccelli, et al.
APL Materials
Winston Chern, Pouya Hashemi, et al.
ECSSMEQ 2014
Amlan Majumdar, Yanning Sun, et al.
IEEE T-ED