Observation of stacking faults in strained Si layers

Abstract

Stacking faults in strained Si layers grown on relaxed SiGe layers were observed using chemical etching and transmission electron microscopy. Defect densities were measured in strained Si layers formed on SiGe buffer layers grown on bulk Si as well as silicon-germanium-on-insulator substrates. Stacking faults were shown to exist in the relaxed SiGe alloy layer without a strained-Si capping layer. In addition to threading dislocations and dislocation pile ups, stacking faults were found to present in nearly all of the materials studied.