W. Zhu, L. Seve, et al.
Physical Review Letters
It is reported that the magnetoresistance (MR) of magnetic tunneling junction (MTJ) like Co1 - xFex/Al2O3/Co1 - xFex improves upon thermal annealing. We investigate the mechanism of this improvement by comparing the X-ray absorption spectra (XAS) of half-MTJ structures (Co84Fe16/Al2O3) before and after annealing. Before annealing, XAS show the presence of few angstroms of Co-and Fe-oxides, which disappeared after annealing at 250 °C for 1/2 hour. We attribute enhanced MR upon annealing to the disappearance of Co and Fe oxides at the interface which reduce the spin-polarization of the conduction electrons and cause spin-flip scattering, both leading to inferior performance of MTJ.
W. Zhu, L. Seve, et al.
Physical Review Letters
W. Zhu, L. Seve, et al.
Physical Review Letters
W. Zhu, C.J. Hirschmugl, et al.
Applied Physics Letters
W. Zhu, C.J. Hirschmugl, et al.
Applied Physics Letters