D.J. Dimaria, E. Cartier
Journal of Applied Physics
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
D.J. Dimaria, E. Cartier
Journal of Applied Physics
J.A. Kash, R. Ulbrich, et al.
Solid State Electronics
Z.A. Weinberg, D.R. Young, et al.
Journal of Applied Physics
J.A. Kash, J.C. Tsang, et al.
CICC 1997