D.J. Dimaria, Maurizio Arienzo
IEEE T-ED
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
D.J. Dimaria, Maurizio Arienzo
IEEE T-ED
J.A. Kash, J.C. Tsang
Solid State Electronics
A. Hartstein, V. Srinivasan, et al.
CF 2006
J.C. Tsang
Applied Physics Letters