Novel structures enabling bulk switching in carbon nanotube FETs

Abstract

The fabrication of the first bulk-switched carbon nanotube field-effect transistor (CNFET) using self aligned scheme of p-i-p (or n-i-n) doping profile along the tube, was demonstrated. It was found that at a current ratio ∼15, the device, without doping, could be switched on and off by the back gate. The back gate was able to control CNFET switching through its impact in region B in a fashion similar to that of a conventional metal oxide semiconductor field effect transistor (MOSFET). This model was also found to operate in the desired enhancement mode and show excellent switching characteristics at S∼63 mV/dec and good performance in terms of DIBL like behavior.