Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Results on crystal orientation dependence of Si doping in molecular beam epitaxial (MBE) GaAs are presented. High electron and hole mobilities in modulation-doped AlGaAs/GaAs heterostructures are demonstrated on many orientations rarely used in MBE. Due to different band structures for different orientations, quantum well heterostructures are likely to exhibit many interesting phenomena which are strongly orientation dependent. © 1986.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
E. Burstein
Ferroelectrics