Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
It is shown that band structure effects give a small but not negligible contribution to the transverse cyclotron mass enhancement in silicon [100] field effect transistor devices. For carrier concentrations of about 8 × 1012 electrons per cm2 the mass increases by approximately Δm* = 0.005, i.e. 2.4%. In opposition to the many-body corrections, the band structure enhancement increases with concentration. © 1976.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Julien Autebert, Aditya Kashyap, et al.
Langmuir