Noise in carbon nanotube field effect transistor

Abstract

Low frequency noise power spectrum density of carbon nanotubes is presented. It is shown that the input-referred noise of carbon nanotubes increases quadratically as gate voltage is overdriven, suggesting that mobility fluctuation is the dominant mechanism contributing to the noise in carbon nanotube field effect transistors. The comparison of source-drain current noise power spectrum densities of carbon nanotubes in air and in vacuum indicates that a part of device noise is due to charge fluctuations from attached air molecules. © 2006 American Institute of Physics.