Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
A method which for the first time can treat two truly semi-infinite semiconductors in contact is introduced and used to study the electronic structure of the two polar (100) Ge-GaAs interfaces. Both the Ge-Ga and the Ge-As interfaces exhibit essentially three interface bands. The nature and origins of these bands are discussed in detail in terms of local densities of states. The results are used to obtain a new interpretation of the experimental data in terms of a stoichiometrically mixed interface. © 1979.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics