New insight into silicide formation: The creation of silicon self-interstitials

Abstract

Diffusion studies of Cu+Re and Re+CU films on silicon show that the formation of Cu3Si precursor lowers the formation temperature of ReSi2 from over 900 to 550°C. The results are explained and generalized to all metal-rich silicides by the specific volume of silicon being much larger in these compounds than in elementary silicon. In forming metal-rich silicides, silicon atoms are forced out of their original planes and are free to form silicon-rich silicides with adjacent metals, or to form silicon self-interstitials at the metal-rich-silicide silicon interface. © 1990 The American Physical Society.