Publication
Microelectronic Engineering
Paper

Nanolithography at 350 KV in a TEM

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Abstract

The resolution of electron beam exposure of resist has been measured at an accelerating voltage of 350 kV using a modified high voltage transmission electron microscope. The equipment and aspects of its performance are described. The methods developed have been used to fabricate metal nanostructures with dimensions smaller than 10 nm. © 1989.

Date

01 Jan 1989

Publication

Microelectronic Engineering

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