Robert W. Keyes
Physical Review B
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
Robert W. Keyes
Physical Review B
Imran Nasim, Melanie Weber
SCML 2024
K.N. Tu
Materials Science and Engineering: A
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering