J. Tersoff
Applied Surface Science
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
J. Tersoff
Applied Surface Science
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008