R.W. Gammon, E. Courtens, et al.
Physical Review B
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
R.W. Gammon, E. Courtens, et al.
Physical Review B
Peter J. Price
Surface Science
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules