About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Abstract
The authors present the first observation of muon spin rotation for normal (Mu) and anomalous (Mu*) muonium centers in compound semiconductors, specifically GaP and GaAs. As in the elemental semiconductors, the muonium defect centers are characterized by a large isotropic hyperfine interaction for Mu but by a small, highly anisotropic, 111symmetric hyperfine interaction for Mu*. All hyperfine parameters measured in GaAs are remarkably close to those obtained in GaP. Furthermore, Apara* is greater than A* for Mu*. These last results are in marked contrast with the observations in diamond, Si, and Ge. © 1985 The American Physical Society.