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Publication
Physical Review B
Paper
Multiple-bonding configurations for oxygen on silicon surfaces
Abstract
Using high-resolution core-level spectroscopy we show that up to four different oxidation states of silicon coexist even at monolayer oxygen coverage. This observation precludes current models with a single adsorption geometry. Below 0.2 monolayer coverage, a single oxidation state is seen but the (100) surface has an oxygen-bonding geometry different from the (111) surface evidenced by different valence states and work-function changes. © 1983 The American Physical Society.