R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Using high-resolution core-level spectroscopy we show that up to four different oxidation states of silicon coexist even at monolayer oxygen coverage. This observation precludes current models with a single adsorption geometry. Below 0.2 monolayer coverage, a single oxidation state is seen but the (100) surface has an oxygen-bonding geometry different from the (111) surface evidenced by different valence states and work-function changes. © 1983 The American Physical Society.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009