Publication
Physical Review B
Paper

Multiple-bonding configurations for oxygen on silicon surfaces

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Abstract

Using high-resolution core-level spectroscopy we show that up to four different oxidation states of silicon coexist even at monolayer oxygen coverage. This observation precludes current models with a single adsorption geometry. Below 0.2 monolayer coverage, a single oxidation state is seen but the (100) surface has an oxygen-bonding geometry different from the (111) surface evidenced by different valence states and work-function changes. © 1983 The American Physical Society.

Date

15 Sep 1983

Publication

Physical Review B

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