Multimode transport in schottky-barrier carbon-nanotube field-effect transistors

Abstract

The effects of multimode transport in carbon nanotube field effect transistors (CNFET) were investigated. It was observed that electrical characteristics of tube devices were a result of the contributions of more than one one-dimensional subband under certain field conditions. The impact of the different bands was made visible through potassium doping of the nanotube. The role of scattering in obtaining a stepwise change of current as a function of gate voltage was also discussed.