P. Freitas, C.C. Tsuei, et al.
Physical Review B
A field effect transistor fabricated with an oxide channel has been shown to demonstrate switching characteristics similar to conventional silicon metal oxide field effect transistors. This device is believed to operate via a Mott metal-insulator transition induced by the gate field, and offers a potential technology alternative for the regime beyond silicon scaling limitations. © 1998 American Institute of Physics.
P. Freitas, C.C. Tsuei, et al.
Physical Review B
J.H. Glownia, J. Misewich, et al.
Journal of the Optical Society of America B: Optical Physics
J.Y.T. Wei, P.J.M. Van Bentum, et al.
Chinese Journal of Physics
H.J. Wen, R. Ludeke, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films